About the Product

G1N65R035TB-N Hybrid Normally-Off GaN FET – High Performance and Reliability

The G1N65R035TB-N is a hybrid normally-off Gallium Nitride (GaN) FET designed for cutting-edge power electronics applications. It combines a strong gate, high threshold, and low reverse voltage drop to deliver best-in-class efficiency and reliability. With no negative gate drive required and a high repetitive input voltage tolerance of ±20V, it simplifies gate drive design while enabling high-performance operation.

Key Features & Benefits

  • Strong Gate with High Threshold: No negative gate drive required, simplifies design

  • Fast Turn-On/Turn-Off Speed: Reduces crossover loss and improves efficiency

  • Low QG: Minimal driver consumption at high switching frequencies

  • Lowest Off-State Reverse Conduction VF: Reduces losses during dead time

  • Low QRR: Excellent for hard-switching bridge applications

  • High Spike Tolerance: 800V, enhancing reliability and robustness

Benefits:

  • Achieve highest conversion efficiency

  • Supports higher frequencies for compact power supply designs

  • Reduced thermal budget saves on cost and size of end products

  • Cooler operating temperatures improve safety and reliability

Applications

Application TypeDescription
Half-Bridge Buck/BoostEfficient power conversion circuits
Totem Pole PFC CircuitPower factor correction in high-efficiency systems
Inverter CircuitReliable switching in inverter applications
High-Frequency Phase Shift, LLC, SwitchingSupports high-efficiency, high-frequency topologies