About the Product
The SI7942DP-T1-GE3 is a high-performance dual N-channel MOSFET transistor optimized for high-frequency and fast-switching circuits. With a drain-source voltage rating of 100V and a drain current capability of 3.8A, this device provides robust performance in demanding RF, industrial, and power electronics applications.

Engineered with low on-resistance and fast switching characteristics, the SI7942DP ensures efficient power handling, reduced heat generation, and improved reliability. It is housed in a compact PowerPAK® SO-8 package, offering excellent thermal performance for designs requiring compact PCB footprints without sacrificing current capacity.

This dual MOSFET design is particularly useful in DC-DC converters, RF power amplifiers, synchronous rectification, and high-frequency switching systems. Its rugged design and energy-efficient operation make it a preferred choice for designers working on advanced electronic solutions.

Key Features:

  • Dual N-Channel MOSFET – Two transistors in one package for compact, efficient designs.

  • 100V Drain-Source Voltage – Supports medium- to high-power switching applications.

  • 3.8A Continuous Drain Current – Reliable current handling for industrial-grade systems.

  • Low RDS(on) – Minimizes conduction losses, improving efficiency.

  • Fast Switching Performance – Ideal for high-frequency circuits and RF designs.

  • Package: PowerPAK® SO-8 for superior thermal management in compact layouts.

  • Applications: RF circuits, DC-DC converters, synchronous rectifiers, industrial power supplies, motor drivers, and high-frequency amplifiers.