About the Product

The TP65H035G4WS is a high-performance 650V Gallium Nitride (GaN) FET, engineered for next-generation power electronics. Designed to deliver ultra-fast switching, lower conduction losses, and superior efficiency, this GaN transistor is ideal for power supplies, high-frequency converters, and crypto miner PSU repair. Its advanced GaN technology provides higher power density and reduced heat generation compared to traditional silicon MOSFETs, making it a reliable choice for demanding, high-power applications.

Key Features:

  • 650V GaN FET for high-voltage applications

  • Ultra-fast switching with low gate charge

  • Superior efficiency and thermal performance over Si-based MOSFETs

  • Enables compact, high-power-density designs

  • Perfect for crypto miner PSU repair, inverters, and power management systems